Catalog Number
ACM2081121-1
Product Name
Zirconium(IV) tert-butoxide
Category
Solution Deposition Precursors
Synonyms
Tetrakis(tert-butanolato)zirconium
IUPAC Name
2-Methylpropan-2-ol;zirconium
Molecular Formula
C16H40O4Zr
Canonical SMILES
CC(C)(C)O.CC(C)(C)O.CC(C)(C)O.CC(C)(C)O.[Zr]
InChI
InChI=1S/4C4H10O.Zr/c4*1-4(2,3)5;/h4*5H,1-3H3;
InChI Key
WRMYASGYMABHCC-UHFFFAOYSA-N
Density
0.985 g/mL at 25 °C (lit.)
Appearance
Slightly yellow liquid
Application
Zirconium tert-butoxide (ZTB) precursor is used to deposit thin films of Zirconia and other zirconium containing films by atomic layer deposition and chemical vapor deposition methods. Zirconium oxide thin films can also be grown at low temperatures, ranging from 150°C to 300°C, by the presence of moisture along with ZTB or by UV-enhanced atomic layer deposition (UV-ALD) process.
Covalently-Bonded Unit Count
5
Hydrogen Bond Acceptor Count
4
Hydrogen Bond Donor Count
4
Monoisotopic Mass
386.197359
Packaging
25 g in stainless steel cylinder
Topological Polar Surface Area
80.9 Ų