Fluoride-free UV-assisted etching of multilayer Mo2C MXene

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PRICE INQUIRY

Catalog Number

ACMA00049994

Product Name

Fluoride-free UV-assisted etching of multilayer Mo2C MXene

Category

MXenes Materials

Description

The new UV-assisted selective etching method can etch Ga atoms in the Mo2Ga2C precursor to obtain fluorine-free Mo2C MXene and avoid the use of toxic and highly corrosive acids. The obtained MXene exhibits a unique 2D graphene-like structure and high purity. When used as a negative electrode material for rechargeable batteries, it exhibits outstanding rate performance and cycle stability.

Purity

0.99

Application

Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Storage

Room temperature and dry

Drying Method

Freeze drying

Form

Powder

Functional Group

-OH, -F, -O, -Cl (customizable), and oxide form a heterojunction