Aluminum Nitride - Materials / Alfa Chemistry

NAVIGATION

Aluminum Nitride

PRICE INQUIRY

Catalog Number

ACMA00021058

Product Name

Aluminum Nitride

Category

AlN

Description

DryPowder

IUPAC Name

azanylidynealumane

Molecular Weight

40.988g/mol

Molecular Formula

AlN;AlN

InChI

InChI=1S/Al.N

InChI Key

PIGFYZPCRLYGLF-UHFFFAOYSA-N

Purity

0.9999

Density

3.26 g/cm³

Application

Aluminum nitride serves as a versatile material primarily due to its unique combination of properties: it is an electrical insulator with exceptional thermal conductivity, high strength, chemical stability, and low thermal expansion. These characteristics make it an ideal choice for a wide range of applications, including as a substrate for high-powered electronics, microcircuits, and heat sinks. Its ability to conduct heat while electrically insulating is particularly valuable for dissipating heat in microchips used in power electronics and wireless communication devices. Additionally, aluminum nitride is utilized in the production of LEDs and piezoelectric MEMS devices due to its compatibility with gallium nitride, as well as in the manufacture of blue and ultraviolet lasers. The material's robustness under high temperatures allows it to be used in harsh environments like jet engines, further expanding its application scope in advanced technological settings.

Complexity

Compound Is Canonicalized

Yes

Covalently-Bonded Unit Count

Defined Atom Stereocenter Count

Defined Bond Stereocenter Count

Deprecated CAS

11132-80-2, 12252-59-4, 1302-38-1, 165390-88-5, 37342-40-8, 633293-26-2, 1192824-18-2, 121833-95-2, 2056109-59-0, 2089022-99-9

EC Number

246-140-8

Exact Mass

40.9846124g/mol

Formal Charge

Heavy Atom Count

Hydrogen Bond Acceptor Count

Hydrogen Bond Donor Count

Isotope Atom Count

MeSH Entry Terms

aluminum nitride;aluminum nitride (AlN)

Monoisotopic Mass

40.9846124g/mol

Rotatable Bond Count

Topological Polar Surface Area

23.8Å²

Undefined Atom Stereocenter Count

Undefined Bond Stereocenter Count

UNII

7K47D7P3M0

Case Study

Application of Aluminum Nitride in Micro Bandpass Filters

XRD u-2u scans of initial AlN films on Si(100) wafers Naik, R. S., et al. Journal of The Electrochemical Society 146.2 (1999): 691.

VLSI, complementary metal oxide semiconductor (CMOS) compatible piezoelectric materials such as aluminum nitride (AlN) have great potential for application in micro bandpass filters. The quality of AlN thin films largely determines the quality factor of such devices. In order to integrate the devices into VLSI CMOS processes with Al electrodes, low temperature deposition techniques are required. A direct current (dc) magnetron sputtering system was modified to deposit high-quality polycrystalline AlN thin films on Si and Al substrates at a temperature of about 1508°C. X-ray diffraction rocking curves of 2.38 were obtained on silicon substrates and 5.78 on thin film aluminum substrates. Due to the relatively low deposition rate and the low deposition temperature required, the quality of AlN thin films is limited by the oxygen content within the film. For a deposition rate of 1 mm/h and a deposition temperature of 1508°C, the partial pressure of oxygen-containing species must be less than about 5×3×10Torr for this narrow rocking curve material. The amount of oxygen contamination depends on various system and process related factors such as deposition rate, deposition temperature, base pressure, oxygen and water partial pressures, target purity, and gas purity. Therefore, the quality of AlN films is highly system dependent. All films are tensile in nature, with stresses of 300-600 MPa for 1 mm of film on either substrate. Minimal stress control is achieved using a DC magnetron source.
The load lock can accommodate up to 14 4-inch wafers, but only one wafer can be processed at a time. There is no direct temperature control. The plasma-induced temperature at the wafer surface determines the deposition temperature. For typical deposition conditions, the surface temperature measured using thermal lacquer is about 125-150°C. The deposition pressure is regulated by a flapper valve. This valve is located between the cryopump and the high vacuum valve. An O-ring isolation valve is used to isolate the chamber from the load lock. Before loading, the wafers are rinsed with deionized water and blown dry. All deposited AlN films have a thickness of about 1 mm. The quality factor for AlN films is the fwhm rocking curve.

Impurity study of aluminum nitride packaging ceramic

Partial gamma-ray spectrum taken from an irradiated AI20~ sample showing the principal gamma rays used to determine the U and Th content Kerness, N. D., T. Z. Hossain, and S. C. Mcguire. Applied radiation and isotopes 48.1 (1997): 5-9.

The results obtained for two ceramics, aluminum oxide and aluminum nitride, both of which are suitable for electronic packaging materials, were compared. In addition, for the measured U and Th concentrations, the flux of alpha particles was estimated and compared with the current industry standards. The study determined a variety of impurities that can be identified by geological origin and processing. Significantly fewer impurities were observed in aluminum nitride compared to aluminum oxide. The alpha particle emitters U and Th were only observed in aluminum oxide ceramics. The estimated aluminum oxide alpha particle flux exceeded the maximum permissible level set by the industry. The lower impurity content, especially U and Th, and its better thermal conductivity than aluminum oxide, its dielectric constant not exceeding that of aluminum oxide, and the thermal expansion coefficient matching that of silicon, indicate that AlN is a better choice for packaging ceramics.
Thin samples of aluminum oxide and aluminum nitride with an area of about 1 cm2 were double encapsulated in high-purity polyethylene vials. The sample mass was in the range of 100-210mg. A short section (~2 mg) of aluminum-gold alloy wire (0.112 wt% Au) was simultaneously irradiated at each sample location to monitor the neutron flux. The samples were irradiated for 3.6 ks in a graphite reflector. After irradiation, the samples were transferred to unexposed vials and counted on a photon spectrometer at different time intervals over the next 3 months to identify short-lived and long-lived activation products.

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