CAS 12064-03-8 Gallium antimonide - Materials / Alfa Chemistry

NAVIGATION

Gallium antimonide

PRICE INQUIRY

Catalog Number

ACM12064038-3

CAS Number

12064-03-8

Product Name

Gallium antimonide

Structure

Category

Electronic Materials; Substrates and Electrode Materials

Synonyms

Gallium antimony,Gallium monoantimonide

Molecular Formula

GaSb

Canonical SMILES

[Ga]#[Sb]

InChI

1S/Ga.Sb

InChI Key

VTGARNNDLOTBET-UHFFFAOYSA-N

Melting Point

710 °C

Application

Gallium antimonide, available in pieces 6mm and smaller with a 99.99% purity, serves as a crucial material in semiconducting devices due to its unique properties, including a band gap of 0.81 eV at 0K and 0.72 eV at 300K. It exhibits high electron mobility of 5000 cm²/(V·s) and hole mobility of 850 cm²/(V·s) at 300K, along with effective masses of 0.042 for electrons and 0.40 for holes. With a dielectric constant of 15.7 and an enthalpy of fusion of 25.10 kJ/mol, gallium antimonide is synthesized through the direct reaction of gallium and antimony at elevated temperatures. This semiconductor is notably used as a substrate for a low-pass filter, with a sharp onset of transmission at 1.8 mm at 300K, and is integral to visible detectors. It is also employed in photovoltaic cells, which utilize a p-n junction to detect light in the 0.4-0.9 mm range. Such cells achieve a maximum detectivity of D* = 4.5 × 10¹¹ cm Hz¹/²/W at 400 Hz at 0.8 mm, with a time constant of about 10⁻³ seconds.

Storage

room temp

EC Number

235-058-8

Form

(single crystal substrate)

MDL Number

MFCD00016101

Packaging

1 ea in rigid mailer

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