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Gallium antimonide, 99.99% metals basis

Catalog Number
ACM12064038-2
CAS Number
12064-03-8
Product Name
Gallium antimonide, 99.99% metals basis
Category
Substrates and Electrode Materials
Application
Gallium antimonide, 99.99% metals basis, serves an essential role in semiconducting devices due to its unique properties. With a band gap of 0.81 eV at 0K and 0.72 eV at 300K, it excels in applications requiring efficient electron mobility, recorded at 5000 cm²/(V·s), and hole mobility at 850 cm²/(V·s) at room temperature. Its effective mass is 0.042 for electrons and 0.40 for holes, with a dielectric constant of 15.7, contributing to its reliability in electronic applications. The substance's enthalpy of fusion is 25.10 kJ/mol, making it suitable for high-temperature synthesis by direct reaction of gallium and antimony. Gallium antimonide is commonly utilized as a substrate in low-pass filters, sharply transmitting at wavelengths of 1.8 mm at 300K. In addition, it is employed in visible detectors with sensitivities ranging from 0.4 to 0.9 mm in photovoltaic cells using a p-n junction. These cells achieve a maximum detectivity of D* = 4.5 × 10¹¹ cm Hz¹/²/W at 0.8 mm, with a time constant of approximately 10⁻³ s.
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